iDEAL Semiconductor announced on October 16 this year the release of its SuperQ™ 150 V MOSFET series, which is now in mass production and available in a variety of industry-standard packages.
The new components extend the performance leadership of the iDEAL SuperQ architecture, achieving record low on-resistance (RDS(on)) while maintaining the cost, manufacturability and ruggedness advantages of silicon.
The SuperQ 150 V series introduces a number of performance-optimizing components, including:
6.4 mΩ (max) iS15M7R1S1C in a compact PDFN 5 x 6 mm package. 2.5 mΩ (max) iS15M2R5S1T series, available in TOLL, D2 PAK-7L and TOLT packages.iS15M2R5S1T has the industry’s joint-lowest resistance, 36% lower than the next best competitor.
Other versions are also being sampled, including:
5.5 mΩ MOSFET in PDFN 5 x 6 mm package. 8.8 mΩ MOSFET, available in TO-220 and PDFN 5 x 6 mm versions.Target applications include motor drives, battery protection circuits, AI servers, and switch-mode power supplies. These markets require ultra-low conduction losses, high ruggedness and scalable silicon manufacturing.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor, said: "Our 150 V SuperQ MOSFETs redefine the performance limits of silicon, enabling capabilities once thought impossible." He added: "We are delivering high performance with silicon's proven reliability, manufacturability and cost advantages. These devices open up new design possibilities for industrial, automotive and data center applications."
All SuperQ 150 V components are available in plug-and-play compatible industry packages including TOLL, TOLT, D2PAK-7L, TO-220 and PDFN 5 x 6 mm.
The new series joins iDEAL’s 200 V SuperQ product line, which is already in production, and is developing 250 V to 650 V platforms to extend silicon’s application range to higher voltages.